SeriesSD211
PackageBulk
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 25V
Rds On (Max) @ Id, Vgs45Ohm @ 1mA, 10V
Vgs(th) (Max) @ Id1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)+25V, -300mV
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)300mW (Ta)
Operating Temperature-55°C ~ 125°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-72-4
Package / CaseTO-206AF, TO-72-4 Metal Can